Observation of ‘‘slow’’ states in conductance measurements on silicon metal‐oxide‐semiconductor capacitors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100693
Reference7 articles.
1. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
2. Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (1f?) Noise
3. 1/fand random telegraph noise in silicon metal‐oxide‐semiconductor field‐effect transistors
4. Frequency response of Si–SiO2 interface states on thin oxide MOS capacitors
5. Studies of interface states of silicon metal-oxide-semiconductor devices by dynamic conductance and noise measurements and effects of bias-temperature stresses
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