Interface property of silicon nitride films grown by inductively coupled plasma chemical vapor deposition and plasma enhanced chemical vapor deposition on In0.82Al0.18As-Reference-Cited by-同舟云学术

Interface property of silicon nitride films grown by inductively coupled plasma chemical vapor deposition and plasma enhanced chemical vapor deposition on In0.82Al0.18As

Published:2015-07 Issue: Volume:71 Page:384-388
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Shi Ming,Tang Hengjing,Shao Xiumei,Huang Xing,Cao Gaoqi,Wang Rui,Li Tao,Li Xue,Gong Haimei

Funder

National Key Basic Research and Development Program of China

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Modification of the virtual-crystal approximation for ternary III–V compounds;Porod;Phys. Rev. B,1983

2. Extended wavelength InGaAs infrared (1.0–2.4μm) detector arrays on SCIAMACHY for space-based spectrometry of the Earth atmosphere;Hoogeveen;Infrared Phys. Technol.,2001

3. In-flight proton-induced radiation damage to SCIMACHY’s extended-wavelength InGaAs near-infrared detectors;Kleipool;Infrared Phys. Technol.,2007

4. Properties of gas source molecular beam epiaxy grown wavelength extended InGaAs photodetector structures on a linear graded InAlAs buffer;Zhang;Semicond. Sci. Technol.,2008

5. Inductively coupled plasma – enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs);Medjdoub;Mater. Sci. Eng.,2001

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