Surface and optical properties of silicon nitride deposited by inductively coupled plasma-chemical vapor deposition-Reference-Cited by-同舟云学术

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Surface and optical properties of silicon nitride deposited by inductively coupled plasma-chemical vapor deposition

Published:2018-08 Issue:8 Volume:39 Page:083005
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Zhu Yi,Chen Xingyou,Ma Yingjie,Zhang Yonggang,Du Ben,Shi Yanhui,Gu Yi

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/39/i=8/a=083005/pdf

Reference20 articles.

1. A comparative study on inductively-coupled plasma high-density plasma, plasma-enhanced, and low pressure chemical vapor deposition silicon nitride films

2. Silicon nitride films prepared by high-density plasma chemical vapor deposition for solar cell applications

3. Inductively coupled plasma — plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs)

4. Investigation of ICPECVD Silicon Nitride Films for HgCdTe Surface Passivation

5. Inductively coupled plasma chemical vapor deposition silicon nitride for passivation of In 0.83 Ga 0.17 As photodiodes

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanisms of GaAs surface passivation by a one-step dry process using low-frequency plasma enhanced chemical deposition of silicon nitride;Microelectronic Engineering;2020-09

2. Improved performances of 2. 6 mu m In0.83Ga0.17 As/InP photodetectors on digitally-graded metamorphic pseudo-substrates;J INFRARED MILLIM W;2019

3. Monolithically grown 2.5 μm InGaAs photodetector structures on GaP and GaP/Si (001) substrates;Materials Research Express;2019-04-12

4. Optimization of In0.6Ga0.4As/InAs electron barrier for In0.74Ga0.26As detectors grown by molecular beam epitaxy;Journal of Crystal Growth;2019-04

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