Inductively coupled plasma — plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs)-Reference-Cited by-同舟云学术

Inductively coupled plasma — plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs)

Published:2001-03 Issue:1-3 Volume:80 Page:252-256
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Medjdoub M.,Courant J.L.,Maher H.,Post G.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference6 articles.

1. Review of inductively coupled plasmas for plasma processing

2. Novel fabrication process for Si2N4 passivated InAlAs/UnGaAs/InP HFETS

3. Suppression of I-V kink in doped channel InAlAs/InGaAs/InP heterojunction field-effect transistor (HFET) using silicon nitride passivation

4. Electrical properties of InAlAs/InGaAs modulation doped structure after SiN passivated annealing

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