Suppression of I-V kink in doped channel InAlAs/InGaAs/InP heterojunction field-effect transistor (HFET) using silicon nitride passivation
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19961333?crawler=true&mimetype=application/pdf
Reference7 articles.
1. Millimeter wave InP HEMT technology: Performance and applications
2. Gate-length dependence of DC and microwave properties of submicrometer In/sub 0.53/Ga/sub 0.47/As HIGFETs
3. dc and rf measurements of the kink effect in 0.2 μm gate length AlInAs/GaInAs/InP modulation‐doped field‐effect transistors
4. Design and characteristics of InGaAs/InP composite-channel HFET's
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1. Analysis of Passivation Techniques in InP HEMTs and Implementation of an Analytical Model of fT Based on the Small Signal Equivalent Circuit;Journal of Nanoscience and Nanotechnology;2019-05-01
2. Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs;Journal of Nanoelectronics and Optoelectronics;2018-06-01
3. Improved DC and RF performance of InAlAs/InGaAs InP based HEMTs using ultra-thin 15 nm ALD-Al 2 O 3 surface passivation;Solid-State Electronics;2018-04
4. Si3N4/Al2O3 Stack Layer Passivation for InAlAs/InGaAs InP-Based HEMTs With Good DC and RF Performances;IEEE Journal of the Electron Devices Society;2018
5. Ultra-thin 20 nm-PECVD-Si 3 N 4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance;Solid-State Electronics;2016-09
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