Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs-Reference-Cited by-同舟云学术

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Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs

Published:2018-06-01 Issue:6 Volume:13 Page:864-871
ISSN:1555-130X
Container-title:Journal of Nanoelectronics and Optoelectronics
language:en
Short-container-title:Journal of Nanoelectronics and Optoelectronics

Author:

Asif Muhammad,Peng Ding,Chen Chen,Xi Wang,Jan Saeedullah,Zhi Jin

Publisher

American Scientific Publishers

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of symmetric gate-recess length on the DC and RF characteristics of InP HEMTs;Chinese Physics B;2022-01-01

2. Impact of Gate Offset in Gate Recess on DC and RF Performance of InAlAs/InGaAs InP-based HEMTs;Chinese Physics B;2021-12-24

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