dc and rf measurements of the kink effect in 0.2 μm gate length AlInAs/GaInAs/InP modulation‐doped field‐effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101151
Reference11 articles.
1. Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length
2. High-performance InAlAs/InGaAs HEMTs and MESFETs
3. Microwave Properties of Schottky-barrier Field-effect Transistors
4. Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFETs
5. A Proposed High-Frequency, Negative-Resistance Diode
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