On the Fluctuation–Dissipation of the Oxide Trapped Charge in a MOSFET Operated Down to Deep Cryogenic Temperatures

Abstract

In this paper, an analysis of the oxide trapped charge noise in a MOSFET operated down to deep cryogenic temperatures is proposed. To this end, a revisited derivation of the interface trap conductance [Formula: see text] and oxide trapped charge noise [Formula: see text] at the SiO2/Si MOS interface is conducted under very low temperature condition, where Fermi–Dirac statistics applies. A new relation between the oxide trapped charge noise [Formula: see text] and the interface trap conductance [Formula: see text] is established, showing the inadequacy of the Nyquist relation at very low temperature. Finally, a new formula for the oxide trapped charge 1/f noise, going beyond the classical Boltzmann expression, is developed in terms of oxide trap density and effective temperature accounting for degenerate statistics.