Affiliation:
1. IMEP-LAHC, Université Grenoble Alpes, MINATEC/INPG, 38016, Grenoble, France
Abstract
In this paper, an analysis of the oxide trapped charge noise in a MOSFET operated down to deep cryogenic temperatures is proposed. To this end, a revisited derivation of the interface trap conductance [Formula: see text] and oxide trapped charge noise [Formula: see text] at the SiO2/Si MOS interface is conducted under very low temperature condition, where Fermi–Dirac statistics applies. A new relation between the oxide trapped charge noise [Formula: see text] and the interface trap conductance [Formula: see text] is established, showing the inadequacy of the Nyquist relation at very low temperature. Finally, a new formula for the oxide trapped charge 1/f noise, going beyond the classical Boltzmann expression, is developed in terms of oxide trap density and effective temperature accounting for degenerate statistics.
Funder
HORIZON EUROPE Excellent Science
Publisher
World Scientific Pub Co Pte Ltd
Subject
General Physics and Astronomy,General Mathematics