Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4751108
Reference13 articles.
1. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
2. Hole Compensation Mechanism of P-Type GaN Films
3. Hydrogen Dissociation from Mg-doped GaN
4. On the incorporation of Mg and the role of oxygen, silicon, and hydrogen in GaN prepared by reactive molecular beam epitaxy
5. AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy
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