Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique-Reference-Cited by-同舟云学术

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Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique

Published:2021-01 Issue: Volume:554 Page:125963
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Malin T.V.,Mansurov V.G.,Galitsyn Yu.G.,Milakhin D.S.,Protasov D.Yu.,Ber B.Ya.,Kazantsev D.Yu.,Ratnikov V.V.,Shcheglov M.P.,Smirnov A.N.,Davydov V.Yu.,Zhuravlev K.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference41 articles.

1. Optical phonon cascade emission by photoelectrons at a p-GaN (Cs, O)–vacuum interface;Rozhkov;JETP Lett.,2016

2. Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gate;Sugiyama;Phys. Status Solidi C,2010

3. Compensation mechanism of P-type GaN films;Nakamura;Jpn. J. Appl. Phys.,1992

4. Heavy doping effects in Mg-doped Ga;Kozodoy;J. Appl. Phys.,2000

5. Widegap column-III nitride semiconductors for UV/blue light emitting devices;Akasaki;J. Electrochem. Soc.,1994

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of magnesium nitride thin films on various surfaces via atomic-nitrogen-assisted molecular beam epitaxy at moderate substrate temperatures;Applied Physics A;2022-10-22

2. DFT Modeling of Unintentional Oxygen Incorporation Enhanced by Magnesium in GaN(0001) and AlN(0001) Growth Surfaces during Metal‐Organic Vapor‐Phase Epitaxy;physica status solidi (b);2022-02-18

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