Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gate-Reference-Cited by-同舟云学术

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Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gate

Published:2010-06-10 Issue:7-8 Volume:7 Page:1980-1982
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi (c)

Author:

Sugiyama T.,Iida D.,Iwaya M.,Kamiyama S.,Amano H.,Akasaki I.

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Insulated p-GaN Gate Active-Passivation HEMT Maintaining Effective Hole Injection for Low Dynamic ON-Resistance;IEEE Electron Device Letters;2024-06

2. Impact of Gate Dielectrics on Electrical Characteristics of p-GaN Gate Enhancement Mode MISHEMT;2024 1st International Conference on Trends in Engineering Systems and Technologies (ICTEST);2024-04-11

3. Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate;Journal of Physics D: Applied Physics;2024-04-03

4. Performance of an E-mode AlGaN/GaN High-Electron-Mobility Transistor Integrated with a Current Limiting Diode;ECS Journal of Solid State Science and Technology;2023-08-01

5. Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator;Chinese Physics B;2022-11-01

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