Impact of Gate Dielectrics on Electrical Characteristics of p-GaN Gate Enhancement Mode MISHEMT
Author:
Affiliation:
1. Model Engineering College, Thrikkakara APJ Abdul Kalam Technological University,Department of Electronics Engineering,Kerala,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10576062/10576051/10576149.pdf?arnumber=10576149
Reference14 articles.
1. AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications
2. Improved DC and RF Performance of Novel MIS p-GaN-Gated HEMTs by Gate-All-Around Structure
3. Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gate
4. Optimization of Gate Oxide of Dual-Gate MISHEMTs for Enhanced DC performance
5. p-GaN/AlGaN/GaN Enhancement-Mode HEMTs
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