Study of the interface of undoped and p‐doped ZnSe with GaAs and AlAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102641
Reference7 articles.
1. Band bendings, band offsets, and interface instabilities inp+-GaAs/n−-ZnSe heterojunctions
2. Growth of undoped ZnSe on (100) GaAs by molecular‐beam epitaxy: An investigation of the effects of growth temperature and beam pressure ratio
3. Comparative Study of Defects in Semiconductors by Electrolyte Electroreflectance and Spectroscopic Ellipsometry
4. Comparative Study of Defects in Semiconductors by Electrolyte Electroreflectance and Spectroscopic Ellipsometry
5. A theory for the electroreflectance spectra of quantum well structures
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