Growth of undoped ZnSe on (100) GaAs by molecular‐beam epitaxy: An investigation of the effects of growth temperature and beam pressure ratio
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339029
Reference16 articles.
1. The interaction of As4and Ga beams on a GaAs(100) surface
2. Electrical and Photo-luminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy: Substrate Temperature Effect
3. Molecular beam epitaxy growth of ZnSe on (100)GaAs by compound source and separate source evaporation: A comparative study
4. Effects of beam pressure ratios on film quality in MBE growth of ZnSe
5. Defects in epitaxial multilayers
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