Band bendings, band offsets, and interface instabilities inp+-GaAs/n−-ZnSe heterojunctions
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.39.12743/fulltext
Reference28 articles.
1. Effects of ZnSe epitaxial growth on the surface properties of GaAs
2. Effects of II–VI epitaxy on III–V surfaces: A study of ZnSe on GaAs
3. Improved photoluminescence of GaAs in ZnSe/GaAs heterojunctions grown by organometallic epitaxy
4. A buried-cap planar stripe (BCP) GaAlAs laser with ZnSe current-confinement region by MBE
5. GaAlAs laser diodes with metalorganic chemical vapor deposition grown ZnSe layer for injection blocking and optical confinement
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