Raman spectroscopy from buried semiconductor interfaces: Structural and electronic properties
Author:
Affiliation:
1. Physikalisches Institut; Universität Würzburg; Am Hubland 97074 Würzburg Germany
Funder
DFG
Stiftung Volkswagenwerk
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201350410/fullpdf
Reference104 articles.
1. Characterization of epitaxial semiconductor growth by reflectance anisotropy spectroscopy and ellipsometry
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