Inductance deep-level transient spectroscopy for determining temperature-dependent resistance and capacitance of Schottky diodes
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1610786
Reference10 articles.
1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
2. Transient capacitance measurements on resistive samples
3. Origin of the Excess Capacitance at Intimate Schottky Contacts
4. Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III–V solar cells
5. Spatial distribution of deep level traps in GaNAs crystals
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