Sb-mediated Ge quantum dots in Ti–oxide–Si diode: negative differential capacitance-Reference-Cited by-同舟云学术

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Sb-mediated Ge quantum dots in Ti–oxide–Si diode: negative differential capacitance

Published:2013-03-01 Issue:3 Volume:14 Page:035005
ISSN:1468-6996
Container-title:Science and Technology of Advanced Materials
language:en
Short-container-title:Science and Technology of Advanced Materials

Author:

Rangel-Kuoppa Victor-Tapio¹,Tonkikh Alexander²³,Werner Peter²,Jantsch Wolfgang¹

Affiliation:

1. Institute of Semiconductor and Solid State Physics, Johannes Kepler Universität, A-4040 Linz, Austria

2. Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany

3. Institute for Physics of Microstructures RAS, Nizhniy Novgorod, Russia

Publisher

Informa UK Limited

Subject

General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1088/1468-6996/14/3/035005

Reference36 articles.

1. Midinfrared photoresponse of Ge quantum dots on a strained Si0.65Ge0.35layer

2. Electron charging in epitaxial Ge quantum dots on Si(100)

3. Hole states in Ge∕Si quantum-dot molecules produced by strain-driven self-assembly

4. Band alignment and conversion efficiency in Si/Ge type-II quantum dot intermediate band solar cells

5. Visible photoluminescence from Ge quantum dots

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1. p-TlGaSeS/n-BN heterojunction as a microwave filter and as a photovoltaic device;physica status solidi (a);2014-10-10

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