p-TlGaSeS/n-BN heterojunction as a microwave filter and as a photovoltaic device-Reference-Cited by-同舟云学术

p-TlGaSeS/n-BN heterojunction as a microwave filter and as a photovoltaic device

Published:2014-10-10 Issue:3 Volume:212 Page:600-606
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Qasrawi Atef F.¹²,Omar Ahmad¹,Azamtta Ala' M.¹,Gasanly Nizami M.³

Affiliation:

1. Department of Physics; Arab-American University; Jenin West Bank Palestine

2. Group of Physics; Faculty of Engineering; Atilim University; 06836 Ankara Turkey

3. Department of Physics; Middle East Technical University; 06800 Ankara Turkey

Funder

AAUJ

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201431173/fullpdf

Reference23 articles.

1. Fabrication and Characterization of High-Mobility Graphene p–n–p Junctions Encapsulated by Hexagonal Boron Nitride

2. Substrate Engineering by Hexagonal Boron Nitride/SiO2for Hysteresis-Free Graphene FETs and Large-Scale Graphene p-n Junctions

3. Y. G. Ho S. S. Hyeon J. H. Jae S. C. Su H. S. Won G. Ukoh S. W. Hwang K. H. Yoo G. W. Ko S. H. Sim H. J. Chung C. S. Sone

4. Field electron emission properties of n-type (111)-oriented single crystal cubic boron nitride

5. Hall mobility and photoconductivity in TlGaSeS crystals

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