Substrate Engineering by Hexagonal Boron Nitride/SiO2for Hysteresis-Free Graphene FETs and Large-Scale Graphene p-n Junctions
Author:
Publisher
Wiley
Subject
General Chemistry,Biochemistry,Organic Chemistry
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/asia.201300505/fullpdf
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