Localization-induced inhomogeneous screening of internal electric fields in AlGaN-based quantum wells-Reference-Cited by-同舟云学术

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Localization-induced inhomogeneous screening of internal electric fields in AlGaN-based quantum wells

Published:2007-12-03 Issue:23 Volume:91 Page:231910
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Murotani Hideaki,Saito Takuya,Kato Nobuo,Yamada Yoichi,Taguchi Tsunemasa,Ishibashi Akihiko,Kawaguchi Yasutoshi,Yokogawa Toshiya

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2817749

Reference13 articles.

1. Near-field scanning optical spectroscopy of an InGaN quantum well

2. Near-field scanning optical microscopy of indium gallium nitride multiple-quantum-well laser diodes

3. Near-field optical study of InGaN/GaN epitaxial layers and quantum wells

4. Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy

5. Investigation of excess carrier diffusion in nitride semiconductors with near-field optical microscopy

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1. A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire;Applied Sciences;2018-07-31

2. Influence of Carrier Localization on Efficiency Droop and Stimulated Emission in AlGaN Quantum Wells;Handbook of Solid-State Lighting and LEDs;2017-06-07

3. Determination of critical diameters for intrinsic carrier diffusion-length of GaN nanorods with cryo-scanning near-field optical microscopy;Scientific Reports;2016-02-15

4. Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations;Journal of Applied Physics;2016-01-14

5. Spatial variations of optical properties of semipolar InGaN quantum wells;SPIE Proceedings;2015-03-13

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