Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations
Author:
Affiliation:
1. Department of Material Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
2. Department of Electrical and Electronic Engineering, Mie University, 1577 Kurimamachiya, Tsu, Mie 514-8507, Japan
Funder
Japan Society for the Promotion of Science (JSPS)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4939864
Reference33 articles.
1. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
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3. Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates
4. Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes
5. Internal quantum efficiency in AlGaN with strong carrier localization
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