Temperature Dependence of Dark Spot Diameters in GaN and AlGaN-Reference-Cited by-同舟云学术

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Temperature Dependence of Dark Spot Diameters in GaN and AlGaN

Published:2021-09-06 Issue:11 Volume:258 Page:2100358
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Physica Status Solidi (b)

Author:

Netzel Carsten¹^ORCID,Knauer Arne¹,Brunner Frank¹,Mogilatenko Anna¹,Weyers Markus¹

Affiliation:

1. Ferdinand-Braun-Institut gGmbH Leibniz-Institut für Höchstfrequenztechnik Gustav-Kirchhoff-Strasse 4 Berlin 12489 Germany

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202100358

Reference55 articles.

1. Contrast analysis of dislocation images in TEM-cathodoluminescence technique

2. Si concentration dependence of structural inhomogeneities in Si-doped AlxGa1−xN/AlyGa1−yN multiple quantum well structures (x = 0.6) and its relationship with internal quantum efficiency

3. Role of dislocations in nitride laser diodes with different indium content

4. Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire

5. Charge accumulation at a threading edge dislocation in gallium nitride

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spatial correlation of defect-selective etching and dark luminescence spots in Al _x Ga_1−xN;Semiconductor Science and Technology;2024-06-06

2. Optical characterization of point defects on internal quantum efficiency in AlGaN quantum wells grown on face-to-face-annealed sputtered AlN templates;AIP Advances;2023-04-01

3. Strain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates;Applied Physics Letters;2023-01-02

4. AlGaN Microfins as Nonpolar UV Emitters Probed by Time-Resolved Cathodoluminescence;ACS Photonics;2022-04-13

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