Si concentration dependence of structural inhomogeneities in Si-doped AlxGa1−xN/AlyGa1−yN multiple quantum well structures (x = 0.6) and its relationship with internal quantum efficiency-Reference-Cited by-同舟云学术

Si concentration dependence of structural inhomogeneities in Si-doped AlxGa1−xN/AlyGa1−yN multiple quantum well structures (x = 0.6) and its relationship with internal quantum efficiency

Published:2014-12-21 Issue:23 Volume:116 Page:235703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kurai Satoshi¹,Anai Koji¹,Miyake Hideto²,Hiramatsu Kazumasa²,Yamada Yoichi¹

Affiliation:

1. Department of Material Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan

2. Department of Electrical and Electronic Engineering, Mie University, 1577 Kurimamachiya, Tsu, Mie 514-8507, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4904847

Reference20 articles.

1. Huge binding energy of localized biexcitons in Al-rich AlxGa1−xN ternary alloys

2. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

3. Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency

4. Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region

5. Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

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