Diagnostic measurement of ion implantation dose and uniformity with a laboratory-based positron probe
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371644
Reference10 articles.
1. Comparison of modern uniformity-mapping techniques
2. A new approach to the modeling of pnpn structures
3. A new approach to the modeling of pnpn structures
4. Characterization of defects in Si and SiO2−Si using positrons
5. Ion-beam-induced damage in silicon studied using variable-energy positrons, Rutherford backscattering, and infrared absorption
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3. Monovacancy and Interstitial Migration in Ion-Implanted Silicon;Physical Review Letters;2007-06-29
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5. Identification of vacancy type defects in low and high energy nitrogen ion implanted InP;Journal of Physics D: Applied Physics;2005-12-02
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