Comparison of modern uniformity-mapping techniques-Reference-Cited by-同舟云学术

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Comparison of modern uniformity-mapping techniques

Published:1991-04 Issue:1-4 Volume:55 Page:230-234
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Keenan W.A.,Johnson W.H.,Yarling C.B.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference19 articles.

1. Ion Implantation Science and Technology;Current,1988

2. An Industry‐Wide Evaluation of Ion Implant Dosing Accuracy

3. Proc. 7th Int. Conf. on Ion Implantation Technology;Glawischnig,1989

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1. Optical characterization of macro-, micro- and nanostructures using polarized light;Journal of Physics: Conference Series;2014-12-03

2. Development of a novel tool for semiconductor process control;Materials Science and Engineering: B;2001-03

3. Diagnostic measurement of ion implantation dose and uniformity with a laboratory-based positron probe;Journal of Applied Physics;1999-12

4. Application of defect related generation current for low-dose ion implantation monitoring;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03

5. Non-destructive depth profiling of silicon ion implantation induced damage in silicon (100) substrates;Thin Solid Films;1993-10

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