Production of vacancy defects in high-energy Sn-ion irradiated GaN—Positron beam Doppler broadening study-Reference-Cited by-同舟云学术

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Production of vacancy defects in high-energy Sn-ion irradiated GaN—Positron beam Doppler broadening study

Published:2006-04 Issue: Volume:376-377 Page:507-511
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Premchander P.,Abhaya S.,Sivaji K.,Amarendra G.,Baskar K.,Lee Y.T.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. Thin films and devices of diamond, silicon carbide and gallium nitride

3. The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals

4. Atomic geometry and electronic structure of native defects in GaN

5. Characterization of Mg doped GaN by positron annihilation spectroscopy

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Identification of fragment ions produced by the decomposition of tetramethyltin and the production of low-energy Sn+ ion beam;PLOS ONE;2021-06-25

2. Group III Nitrides;Springer Handbook of Electronic and Photonic Materials;2017

3. Effects of electronic and nuclear stopping power on disorder induced in GaN under swift heavy ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-08

4. Structural, optical, and electrical characteristics of 70 Mev Si5+ ion irradiation-induced nanoclusters of gallium nitride;Journal of Materials Science;2010-09-08

5. GaN optical degradation during high energy Sn5+ ion irradiation;Journal of Materials Science;2010-07-29

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