Effects of electronic and nuclear stopping power on disorder induced in GaN under swift heavy ion irradiation-Reference-Cited by-同舟云学术

Effects of electronic and nuclear stopping power on disorder induced in GaN under swift heavy ion irradiation

Published:2016-08 Issue: Volume:381 Page:39-44
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Moisy F.,Sall M.,Grygiel C.,Balanzat E.,Boisserie M.,Lacroix B.,Simon P.,Monnet I.

Funder

EMIR

iPAC

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference49 articles.

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5. Group III Nitride Semiconductor Compounds: Physics and Applications;Gil,1998

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