Identification of vacancy type defects in low and high energy nitrogen ion implanted InP-Reference-Cited by-同舟云学术

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Identification of vacancy type defects in low and high energy nitrogen ion implanted InP

Published:2005-12-02 Issue:24 Volume:38 Page:4329-4334
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Santhakumar K,Rao G Venugopal,Amarendra G,Abhaya S,Sastry V Sankara,Nair K G M,Ravichandran V

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/38/i=24/a=011/pdf

Reference31 articles.

1. Deep donor levels (DXcenters) in III‐V semiconductors

2. The EL2 Defect in GaAs: Some Recent Developments

3. Native defects in gallium arsenide

4. Present status of undoped semi-insulating LEC bulk GaAs as a radiation spectrometer

5. Mesotaxy: Synthesis of buried single-crystal silicide layers by implantation

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Positron annihilation measurements in high energy alpha irradiated undoped indium antimonide;International Journal of Modern Physics B;2014-12-04

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