Effects of compressive strain on optical properties of InxGa1−xN∕GaN quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2362587
Reference12 articles.
1. Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry
2. Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire
3. Influence of substrate‐induced biaxial compressive stress on the optical properties of thin GaN films
4. Thermal and molecular stresses in multi-layered structures of nitride devices
5. Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures
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