Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1469219
Reference9 articles.
1. Luminescences from localized states in InGaN epilayers
2. Determination of photoluminescence mechanism in InGaN quantum wells
3. Exploring the effects of tensile and compressive strain on two-dimensional electron gas properties within InGaN quantum wells
4. Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures
5. High optical quality AlInGaN by metalorganic chemical vapor deposition
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