An explanation for the directionality of interfacet migration during molecular beam epitaxical growth on patterned substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353353
Reference13 articles.
1. Growth of GaAs‐Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two‐dimensional thin‐film definition
2. High quality molecular beam epitaxial growth on patterned GaAs substrates
3. Molecular beam epitaxy of GaAs/AlGaAs superlattice heterostructures on nonplanar substrates
4. Molecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substrates
5. Molecular Beam Epitaxical Growth of AlxGa1-xAs on non- Planar Patterned GaAs (100)
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