Ridge structure transformation by group-III species modification during the growth of (Al,Ga)As on patterned substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1849433
Reference25 articles.
1. Growth of semiconductor heterostructures on patterned substrates: defect reduction and nanostructures
2. Two-dimensional quantum confinement in multiple quantum wire lasers grown by OMCVD on V-grooved substrates
3. Surface and interface properties of quantum nanostructures grown on nonplanar substrates
4. Arsenic pressure dependence of pure two-face inter-surface diffusion between (0 0 1) and (1 1 1)B in molecular beam epitaxy of GaAs
5. UHV-AFM study of MBE-grown 10 nm scale ridge quantum wires
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth and Epitaxy;Surface Science;2012-03-30
2. Chapter 16 Growth and Etching of Semiconductors;Dynamics;2008
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