UHV-AFM study of MBE-grown 10 nm scale ridge quantum wires
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Stimulated emission in semiconductor quantum wire heterostructures
2. New GaAs quantum wires on {111}B facets by selective MOCVD
3. Fabrication of GaAs arrowhead‐shaped quantum wires by metalorganic chemical vapor deposition selective growth
4. Surface diffusion length of Ga adatoms on (1̄1̄1̄)B surfaces during molecular beam epitaxy
5. Arsenic Pressure Dependence of the Surface Diffusion in Molecular Beam Epitaxy on (111)B-(001) Mesa-Etched GaAs Substrates Studied byIn SituScanning Microprobe Reflection High-Energy Electron Diffraction
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1. A comparison between GaAs and AlAs deposition on patterned substrates;Journal of Crystal Growth;2005-05
2. Ridge structure transformation by group-III species modification during the growth of (Al,Ga)As on patterned substrates;Journal of Applied Physics;2005-02-15
3. Effect of As molecular species on inter-surface diffusion in GaAs MBE for ridge structure fabrication;Journal of Crystal Growth;2001-06
4. Improvement of Growth Process to Achieve High Geometrical Uniformity in InGaAs Ridge Quantum Wires Grown by Selective MBE on Patterned InP Substrate;Japanese Journal of Applied Physics;2001-04-30
5. In situ etching and regrowth in III–V molecular beam epitaxy for future nanotechnology;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
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