A comparison between GaAs and AlAs deposition on patterned substrates-Reference-Cited by-同舟云学术

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A comparison between GaAs and AlAs deposition on patterned substrates

Published:2005-05 Issue:1-4 Volume:278 Page:458-463
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Williams R.S.,Ashwin M.J.,Jones T.S.,Neave J.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Growth of semiconductor heterostructures on patterned substrates: defect reduction and nanostructures

2. Two-dimensional quantum confinement in multiple quantum wire lasers grown by OMCVD on V-grooved substrates

3. E. Kapon, F. Reinhardt, G. Biasiol, A. Gustafsson, 123–124 (1998) 674.

4. Arsenic pressure dependence of pure two-face inter-surface diffusion between (0 0 1) and (1 1 1)B in molecular beam epitaxy of GaAs

5. UHV-AFM study of MBE-grown 10 nm scale ridge quantum wires

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