Effect of simultaneous source and bias pulsing in inductively coupled plasma etching
Author:
Affiliation:
1. Applied Materials Inc., 974 E. Arques Avenue, M/S 81517, Sunnyvale, California 94085, USA
2. Samsung Electronics, Hwasung City, Kyunggi-Do 445-701, Republic of Korea
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3262616
Reference26 articles.
1. Plasma-etching processes for ULSI semiconductor circuits
2. Plasma processing damage in etching and deposition
3. Process requirements for continued scaling of CMOS—the need and prospects for atomic-level manipulation
4. Functional design of a pulsed two-frequency capacitively coupled plasma in CF[sub 4]/Ar for SiO[sub 2] etching
5. Synchronous Pulse Plasma Operation upon Source and Bias Radio Frequencys for Inductively Coupled Plasma for Highly Reliable Gate Etching Technology
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