Electronic properties at the oxide interface with silicon and germanium through x-ray induced oxide charging
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4766925
Reference26 articles.
1. Band offsets of ultrathin high-κoxide films with Si
2. Complete band offset characterization of the HfO2/SiO2/Si stack using charge corrected x-ray photoelectron spectroscopy
3. Charging phenomena in dielectric/semiconductor heterostructures during x-ray photoelectron spectroscopy measurements
4. Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials
5. Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopy
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