Evaluation of valence band offset and its non-commutativity at all oxide α-Cr2O3/β-Ga2O3 heterojunction from photoelectron spectroscopy-Reference-Cited by-同舟云学术

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Evaluation of valence band offset and its non-commutativity at all oxide α-Cr2O3/β-Ga2O3 heterojunction from photoelectron spectroscopy

Published:2021-11-07 Issue:17 Volume:130 Page:175303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ghosh Sahadeb¹²³^ORCID,Baral Madhusmita¹²,Bhattacharjee Jayanta¹²^ORCID,Kamparath Rajiv⁴,Singh S. D.¹²^ORCID,Ganguli Tapas¹²

Affiliation:

1. Synchrotrons Utilization Section, Raja Ramanna Centre for Advanced Technology, Indore 452013, India

2. Homi Bhabha National Institute, Anushakti Nagar, Mumbai 400094, India

3. Department of Physics, Bhagatsingh Govt. P. G. College, Jaora, Ratlam, Madhya Pradesh 457226, India

4. Optics Coating Lab, High Energy Optics Section, Laser Technology Division, Raja Ramanna Centre for Advanced Technology, Indore 452013, India

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0046538

Reference54 articles.

1. Recent progress on the electronic structure, defect, and doping properties of Ga2O3

2. A review of Ga2O3materials, processing, and devices

3. Review of gallium oxide based field-effect transistors and Schottky barrier diodes

4. Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

5. Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reliable operation of Cr2O3:Mg/β-Ga2O3 p–n heterojunction diodes at 600 °C;Applied Physics Letters;2024-04-08

2. Electrical properties of vertical Cu2O/β-Ga2O3 (001) p–n diodes;AIP Advances;2023-10-01

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