Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.28.1965/fulltext
Reference55 articles.
1. Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials
2. Chemical preparation of GaAs surfaces and their characterization by Auger electron and x‐ray photoemission spectroscopies
3. Total valence-band densities of states of III-V and II-VI compounds from x-ray photoemission spectroscopy
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