The interface microstructure and band alignment of hexagonal boron nitride/diamond heterojunctions-Reference-Cited by-同舟云学术

The interface microstructure and band alignment of hexagonal boron nitride/diamond heterojunctions

Published:2023 Issue:16 Volume:11 Page:5324-5330
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Chen Jingren¹,Tao Ran²,Wang Gaokai¹,Yin Zhigang¹,Zeng Libin¹,Yu Xinxin²,Zhang Siyu¹,Wu Yun²,Li Zhonghui²,Zhang Xingwang¹³^ORCID

Affiliation:

1. Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China

2. CETC Key Laboratory of Carbon-based Electronics, Nanjing Electronic Devices Institute, Nanjing 210016, P. R. China

3. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China

Abstract

h-BNs with different orientations are directly grown on polycrystalline diamond due to minimization of the system energy. The diamond/h-BN heterojunction shows a type-II band alignment with a valence/conduction band offset of 2.08/1.86 eV.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC00498H

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