Author:
Jung K. B.,Cho H.,Hahn Y. B.,Lambers E. S.,Onishi S.,Johnson D.,Hurst A. T.,Childress J. R.,Park Y. D.,Pearton S. J.
Subject
General Physics and Astronomy
Cited by
39 articles.
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1. Eliminating etch stop in high-density magnetic tunnel junction patterning using high-temperature CO/NH3 plasma etching;Journal of Vacuum Science & Technology B;2019-11
2. Etch stop improvement using a roof mask structure in a magnetic material etched by CO/NH3 plasma;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-11
3. Correlation between dry etching resistance of Ta masks and the oxidation states of the surface oxide layers;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09
4. Suboxide/subnitride formation on Ta masks during magnetic material etching by reactive plasmas;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2015-07
5. Study about the damaged mechanism of the patterned perpendicular magnetic tunnel junctions by hydrogen ion treatments;Japanese Journal of Applied Physics;2015-03-26