Study about the damaged mechanism of the patterned perpendicular magnetic tunnel junctions by hydrogen ion treatments
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/54/i=4S/a=04DM07/pdf
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1. The emergence of spin electronics in data storage
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4. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
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1. Etching damage induced performance degradation in spin transfer torque magnetic random access memory fabrication;Journal of Vacuum Science & Technology B;2021-09
2. Ion beam etching process for high-density spintronic devices and its damage recovery by the oxygen showering post-treatment process;Japanese Journal of Applied Physics;2017-03-21
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