Eliminating etch stop in high-density magnetic tunnel junction patterning using high-temperature CO/NH3 plasma etching-Reference-Cited by-同舟云学术

Eliminating etch stop in high-density magnetic tunnel junction patterning using high-temperature CO/NH3 plasma etching

Published:2019-11 Issue:6 Volume:37 Page:061808
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Satake Makoto¹,Abe Takahiro¹,Ichino Takamasa²,Suyama Makoto²,Kawaguchi Tadayoshi²,Yamada Masaki³,Matsumoto Eiji¹,Maeda Kenji¹,Yokogawa Kenetsu²

Affiliation:

1. Hitachi High-Technologies America, Inc., 6357 NE Evergreen Pkwy., Bldg. D, Hillsboro, Oregon 97124

2. Hitachi High-Technologies Corporation, 794, Higashitoyoi, Kudamatsu, Yamaguchi 744-0002, Japan

3. R&D Group, Hitachi, Ltd., 1-280, Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5123485

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