Improved GaAs MESFET with a thininsitubuffer grown by liquid phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90158
Reference3 articles.
1. Etching of Dislocations on the Low‐Index Faces of GaAs
2. Simple method of measuring drift-mobility profiles in thin semiconductor films
3. Impurity gradients caused by surface states and substrate doping in epitaxial GaAs
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. GaAs MESFET's by molecular beam epitaxy;IEEE Transactions on Electron Devices;1982-02
2. Low‐noise GaAs field‐effect transistors prepared by molecular beam epitaxy;Applied Physics Letters;1981-10
3. High purity and chrome-doped GaAs buffer layers grown by liquid phase epitaxy for mesfet application;Journal of Electronic Materials;1981-07
4. The growth of buffered GaAs mesfet structures by LPE;Journal of Electronic Materials;1980-01
5. Growth of high resistivity GaAs VPE layers for device applications by the AsCl3-Ga-N2 system;Journal of Crystal Growth;1979-10
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