Growth of high resistivity GaAs VPE layers for device applications by the AsCl3-Ga-N2 system
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Proc. 5th Intern. Symp. on GaAs and Related Compounds;Nozaki,1974
2. Improved GaAs MESFET with a thininsitubuffer grown by liquid phase epitaxy
3. Proc. 6th Intern. Symp. on GaAs and Related Compounds;Cox,1976
4. Vapor‐phase epitaxial growth of GaAs in a nitrogen atmosphere
5. A multi-wafer growth technique for GaAs vapor phase epitaxy using the AsCl3-Ga-N2 system with a horizontal reactor
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. GaAs growth rates of 528 μm/h using dynamic-hydride vapor phase epitaxy with a nitrogen carrier gas;Applied Physics Letters;2020-05-04
2. Chapter 4 Halide and Chloride Transport Vapor-Phase Deposition of InGaAsP and GaAs;Semiconductors and Semimetals;1985
3. Review of Techniques for Epitaxial Growth of High-Resistivity GaAs — Growth Systems, Problems and Substrate Effects;Semi-Insulating III–V Materials;1980
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