GaAs growth rates of 528 μm/h using dynamic-hydride vapor phase epitaxy with a nitrogen carrier gas
Author:
Affiliation:
1. Rochester Institute of Technology, Rochester, New York 14623, USA
2. National Renewable Energy Laboratory, Golden, Colorado 80401, USA
Funder
Solar Energy Technologies Office
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/5.0002053
Reference19 articles.
1. III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy
2. K. Horrowitz , T. Remo , A. Ptak , and B. Smith , “ A techno-economic analysis and cost reduction roadmap for III-V solar cells,” Report No. NREL/TP-6A20-72103 (Golden, CO, 2018).
3. Tunnel Junction Development Using Hydride Vapor Phase Epitaxy
4. Multijunction Ga 0.5 In 0.5 P/GaAs solar cells grown by dynamic hydride vapor phase epitaxy
5. Toward Low-Cost 4-Terminal GaAs//Si Tandem Solar Cells
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