Review of Techniques for Epitaxial Growth of High-Resistivity GaAs — Growth Systems, Problems and Substrate Effects-Reference-Cited by-同舟云学术

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Review of Techniques for Epitaxial Growth of High-Resistivity GaAs — Growth Systems, Problems and Substrate Effects

Published:1980 Issue: Volume: Page:41-56
ISSN:
Container-title:Semi-Insulating III–V Materials
language:
Short-container-title:

Author:

Cox H. M.,Dilorenzo J. V.

Publisher

Birkhäuser Boston

Link

http://link.springer.com/content/pdf/10.1007/978-1-4684-9193-7_4.pdf

Reference55 articles.

1. Nozaki, T., Ogawa. M., Terao, H. and Watanabe, H. (1975). Inst. Phys. Conf. Ser., 24, 46

2. Butlin, R.S., Parker, D., Crossley, I. and Turner, J. (1977). Inst. Phys. Conf. Ser., 33a, 237

3. Yokayama, N., Shibatomi, A., Ohkawa, S., Fukuta, M. and Ishikawa, H. (1975). Inst. Phys. Conf. Ser., 33b, 201

4. Houng, Y.M. and Pearson, G.L. (1978). J. Appl. Phys., 49, 3348

5. Meignant, D., Boccon-Gibod, D. and Bourgeois, J.M. (1979). Electron. Lett., 15, 779

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MOVPE growth and characteristics of Fe-doped semi-insulating InP layers;Electronics Letters;1986

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