Impurity gradients caused by surface states and substrate doping in epitaxial GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89698
Reference12 articles.
1. C.W. X and K band radiation from GaAs epitaxial layers
2. Occurrence of a High Resistance Layer at Vapor Epitaxial GaAs Film-Substrate Interface
3. Ohmic Contacts to Solution‐Grown Gallium Arsenide
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1. Reconstruction controlled dopant incorporation and ‘‘coercion’’ effects in molecular‐beam epitaxial germanium grown on gallium arsenide;Journal of Applied Physics;1994-08-15
2. Influence of As4/Ga flux ratio on Be incorporation in heavily doped GaAs grown by molecular beam epitaxy;Journal of Crystal Growth;1989-02
3. Zn gettering in InGaAs/InP interfaces;Journal of Applied Physics;1986-04
4. Chromium redistribution in ion-implanted GaAs;Solid-State Electronics;1984-05
5. The use of substrate annealing as a gettering technique prior to molecular beam epitaxial growth;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1984
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