Simple method of measuring drift-mobility profiles in thin semiconductor films
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19760186?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Pucel, R.A., Haus, H.A., and Statz, H.: ‘Signal and noise properties of gallium arsenide microwave field-effect transistors’, Advances in electronics and electron physics, 38, (Academic Press 1975), p. 195–264
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