Electroreflectance investigation of (Ga1−xAlx)0.47In0.53As lattice matched to InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94146
Reference11 articles.
1. Ga<inf>0.47</inf>In<inf>0.53</inf>As: A ternary semiconductor for photodetector applications
2. Calculation of the Al-Ga-In-As phase diagram and LPE growth of AlxGayIn1-x-yAs on InP
3. Compositional dependence of band‐gap energy and conduction‐band effective mass of In1−x−yGaxAlyAs lattice matched to InP
4. Spin-Orbit Splitting in Compositionally Disordered Semiconductors
5. Spin-Orbit Splitting in Compositionally Disordered Semiconductors
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1. The spin–orbit splitting band in InGaAsSb alloys lattice-matched to InAs;Journal of Physics D: Applied Physics;2014-06-24
2. A convenient band-gap interpolation technique and an improved band line-up model for InGaAlAs on InP;Applied Physics B;2010-04-09
3. Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance;Thin Solid Films;2008-09
4. Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy;Applied Physics Letters;2007-04-23
5. High direct energy band gaps determination in In[sub x]Al[sub 1−x]As coherently grown on InP;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
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